Abstract
Si-doped GaAs crystals with a rectangular cross section have been grown using the modified two-temperature horizontal Bridgman (M2T-HB) technique [1]. A viewing window was opened on top of the furnace to monitor the growth process of rectangular GaAs crystals. By controlling the position and shape of the solid/liquid interface underneath the viewing window, lineage defects were eliminated and crystals of low dislocation density were successfully grown. Numerical analysis based on a semi-implicit finite difference scheme was performed with a radiative boundary condition imposed on the surface of solid crystal. The effect of radiative heat loss through the viewing window is discussed.
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