Abstract

Epitaxial La0.7Sr0.3MnO3 films with different thicknesses (9–90 nm) were deposited on SrTiO3 (0 0 1) substrates by pulsed laser deposition. The films have been investigated with respect to morpho-structural, magnetic, and magneto-transport properties, which have been proven to be thickness dependent. Magnetic contributions with different switching mechanisms were evidenced, depending on the perovskite film thickness. The Curie temperature increases with the film thickness. In addition, colossal magnetoresistance effects of up to 29% above room temperature were evidenced and discussed in respect to the magnetic behavior and film thickness.

Highlights

  • Films Deposited on STO (0 0 1).The discovery of ferromagnetism in polycrystalline perovskitic LaMnO3 structures [1]with a mixed valence of Mn ions (Mn3+ /Mn4+) has inspired numerous studies dedicated toLa substituted perovskites

  • Films were prepared by pulsed laser deposition (PLD) and applied field is observed, more pronounced at higher temperatures

  • This temperature analyzed by X-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and property measurement system (PPMS)

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Summary

Introduction

Films Deposited on STO (0 0 1).The discovery of ferromagnetism in polycrystalline perovskitic LaMnO3 structures [1]with a mixed valence of Mn ions (Mn3+ /Mn4+) has inspired numerous studies dedicated toLa substituted perovskites. La1−x Srx MnO3 attracts interest especially due to colossal magneto-resistance (CMR) effects [2,3]. La1−x Srx MnO3 thin films are reported to present colossal magnetoresistance in high magnetic fields, e.g., 98% at. Due to its high spin polarization, it is an interesting candidate to include in functional multilayers, such as multiferroic structures [6], in which epitaxy and thickness play a crucial role. Other effects include anisotropic magnetoresistance (AMR) [7], transport half-metallicity [8,9], the highest Curie temperature, TC , among the manganites (369 K for bulk [10]), metalinsulator transition [11], high magnetic anisotropy, low carrier density (1021 –1022 cm−3 ) [12]

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