Abstract
We investigated the influence of Aluminum thin film thickness during heat treatment. The films with thickness of 5 nm, 10 nm and 15 nm were heated from room temperature up to above melting point with same heating rate. Molecular Dynamics (MD) simulation is employed to study the behaviour of the thin film where the atoms were followed based on its trajectories. Thin film thickness gives significance contribution to the mechanism of the melting. Smaller thickness suffered strong pressure oscillation while the thin film temperature is increases. Local crystal structure confirmed the transformation of the system from crystalline state to melting state.
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