Abstract
We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline elements began to form as the film thicknesses increased to more than approximately 90 nm. We confirmed the coexistence of these two crystalline forms using x-ray diffraction and Raman spectroscopy, and we attribute the thickness-dependent structural change to internal stress induced by lattice mismatch with the substrate and to natural lattice relaxation at the growth conditions.
Highlights
Since the discovery of graphene in 2004, interest in the field of two-dimensional atomic layered materials has been growing.[1]
Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy
The intrinsic bandgap in these materials can be tailored by changing the constituent elements and the number of layers
Summary
Since the discovery of graphene in 2004, interest in the field of two-dimensional atomic layered materials has been growing.[1]. Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy
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