Abstract
We have investigated the effect of postgrowth thermal annealing on undoped GaN0.014As0.954Bi0.032/GaAs structures grown by molecular-beam epitaxy. For the as-grown GaN0.014As0.954Bi0.032 film, the room-temperature photoluminescence (PL) spectrum shows poor emission efficiency. The PL intensity can be markedly improved by postgrowth annealing. The optimal annealing temperature is found to be ∼700 °C. A blueshift of the PL peak during annealing was also observed in annealed GaN0.014As0.954Bi0.032 with a maximum value of ∼27 meV. On the basis of high-resolution X-ray diffraction measurements, the mechanism for the blueshift of the GaN0.014As0.954Bi0.032 PL peak during annealing was studied.
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