Influence of thermal annealing on silicon negative ion implanted SiO2 thin films

Abstract

SiO2 thin film of thickness 300 nm grown on p-type silicon substrate was implanted with 100 keV silicon negative ions with fluences varying from 5×1015 to 1×1017 ions cm−2. The implanted samples were annealed at the temperature of 500 °C under N2 ambient. Electron spin resonance (ESR), Fourier transform infrared (FTIR), Photoluminescence (PL), and glancing angle X-ray diffraction (GXRD) techniques have been used to investigate the implanted SiO2 thin film after thermal annealing. ESR studies revealed the absence of vacancy defects after thermal annealing. FTIR studies showed variations in the vibrational modes, attributed to the formation of new structures after annealing at 500 °C. PL studies showed the presence of a peak at 720 nm with an intensity higher than that observed for the unannealed SiO2 samples. This effect showed a decrease in the non-radiative defect centers with an increase in the radiative Si:SiO2 interface states after thermal annealing. The presence of an additional peak at 692 nm may be attributed to the radiative recombination centers associated with silicon nanoclusters formed after annealing at 500 °C. GXRD studies showed a decrease in the intensity of the spectra for the samples implanted with 1×1016 and 5×1016 ions cm−2 after thermal annealing at 500 °C. This result reveals the formation of new SiOx structures in SiO2 thin film.