Abstract
Solution-processed silver nanowires (Ag NWs)/AZO composite films were deposited on indium-free transparent conductive layers to yield hybrid photo-diodes. In this study, high-quality Ag NWs/AZO films were prepared by simple and controllable annealing process at 340 °C under nitrogen atmosphere instead of low annealing temperature used previously. P-type polymer poly-3-hexylthiophene-2,5 -diyl (P3HT) was then spin-coated on Ag NWs/AZO top to form p–n junction. Devices annealed under nitrogen showed significant improvement in rectification ratios when compared to those annealed under air at low temperature. The proposed method improved p–n junction diode behavior through tuning defect properties of Ag NWs/AZO by annealing. Ag NWs/AZO photodiode devices exhibited high on/off ratio reaching ∼8 × 103 using Ag NWs/AZO-340 when compared to ∼4 × 102 obtained with Ag NWs/AZO-200. The solution processed indium free Ag NWs/AZO composite film demonstrated superior performance as transparent electrodes, promising for reliable hybrid photodiodes in practical sensors. These findings look promising for simple and competitive detection of defect in Ag NWs/AZO for better future applications in optoelectronics.
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