Abstract
Asymmetric broad-waveguide separate-confinement heterostructure (BW-SCH) quantum well (QW) laser diode emitting at 808 nm is analyzed and designed theoretically. The dependence of the optical field distribution, vertical far-field angle, and internal loss on different thicknesses of the upper waveguide layer is calculated and analyzed. Calculated results show that when the thicknesses of the lower and upper waveguide layers are 0.45 and 0.3 \mu m, respectively, for the devices with 100-\mu m-wide stripe and 1000-\mu m-long cavity, an output power of 7.6 W at 8 A, a vertical far-field angle of 37°, a slope efficiency of 1.32 W/A, and a threshold current of 189 mA can be obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
