Abstract
We have investigated the influence of the thickness of an undoped spacer layer under the channel on the current-voltage characteristics of GaAs MESFETs. To that purpose we have grown the active layers of the MESFETs on top of a 50 nm AlAs layer to separate the device effectively from the undoped GaAs substrate. Substrate leakage currents are of the order of A at 30 V source-substrate bias. DC characteristics are measured for four MESFETs with identical layer structure and doping but different spacer layer thicknesses. Comparison shows that MESFETs with thin spacer layers can be useful for low-noise applications but lose in transconductance and mobility values.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
