Influence of the thickness of ZrO2 buffer layer on the electrical and optical properties of VO2 films

Abstract

In this study, high-quality thermochromic vanadium dioxide (VO2) thin films were grown on ZrO2/glass by pulsed laser deposition and were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), double beam spectrophotometry and Hall Effect measurement system. Based on XRD results, it can be inferred that the crystal structure of ZrO2 buffer layer can be transformed between monoclinic and tetragonal structures with the increase of buffer layer thickness. Photoelectric performance tests showed that the introduction of ZrO2 buffer layer considerably reduced the phase transition temperature (Tc) and hysteresis loop width (ΔH) of the VO2 films and allowed the visible light transmittance (Tlum) and solar modulation ability (ΔTsol) of the films to be tuned effectively. Especially, when the thickness of the ZrO2 buffer layer was 50 nm, the Tc of the VO2 films reached the minimum value of 48 °C. When the ZrO2 buffer layer thickness increased to 125 nm, the sheet resistance change of the VO2 film attained two orders of magnitude, and their Tlum-90°C and ΔTsol were as high as 50.01% and 7.88%, respectively. These results showed that the ZrO2 buffer layer considerably affected the growth of VO2 films on amorphous glass substrates and was beneficial for the application of VO2 in energy-saving smart windows.