Abstract
In this work a study of the capture and emission kinetics related to the slow interface states present in In0.53Ga0.47As/Si3N4 interfaces on MIS (metal-insulator-semiconductor) structures is reported. These states are found to be filled by electrons from the semiconductor conduction band by means of a tunnel mechanism. On the other hand, charge tunnel emission from the slow states takes place through the fast interface states energetically located in the semiconductor bandgap. The influence of surface plasma treatments on the slow state kinetics has been analyzed. The results indicate a different nature and electrical behaviour of the slow interface states when they are located in the native oxide layer or in the silicon nitride. The surface treatments allow us to eliminate completely the slow states related to the native oxide and to reduce significantly the density of slow states in the silicon nitride.
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