Abstract
In this work, we found that the electron-phonon interaction (EPI) is dependent on the surface roughness. Simulations of Resonance Raman Spectroscopy (RRS) spectra, show that the Fano asymmetry parameter q, decreases as the Mean Surface Roughness (MSR) increases. They also make it clear, that the magnitude of the EPI strength increases with increasing roughness. Our results also show that the EPI along with the surface morphology in an undoped CdTe sample allow the manifestation of other phonons in the RRS spectra. This work contributes to understand and potentially control the EPI in semiconductors.
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