Abstract
The influence of the surface microroughness of Si(001) substrates on the morphology of CaF2 epitaxial layers is investigated in the high-temperature growth mode. The atomic-force microscopy method is used to demonstrate that the silicon surface relief substantially affects the nucleation, growth, and formation of the morphology of CaF2 layers.
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Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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