Abstract
This paper presents experimental and theoretical piezoelectric photoacoustic spectra of ZnSe samples after different surface treatments: grinding, polishing, and etching. The modification of the Jackson and Amer theory, presented in the paper, enabled numerical interpretation of the spectra in the model of a mechanically damaged surface layer. The nature of the characteristic peak observed at E = 2.65 eV below the energy gap is explained as caused by the Urbach absorption tail and the damaged surface layer of a sample. The correlation between the microhardness of the Zn1-x Be x Se and ZnSe crystals and the thickness of the mechanically damaged surface layer was observed.
Highlights
Photothermal methods [1] represent a useful tool for measurements of the optical, thermal, and recombination parameters of semiconductors [2,3,4,5,6,7]
This paper shows results of piezoelectric spectral studies of ZnSe samples, indicating that this measuring method can bring useful information about the quality of the samples after different surface treatments
The maxima at the energy E = 2.22 eV and E = 2.40 eV are caused by the surface curve to the experimental piezoelectric spectrum of the ground ZnSe sample 2
Summary
Photothermal methods [1] represent a useful tool for measurements of the optical, thermal, and recombination parameters of semiconductors [2,3,4,5,6,7]. The experimental effect that is analyzed and interpreted numerically in this paper is a much smaller value of the amplitude of the piezoelectric signal in the band-toband absorption region in proportion to the value in the Urbach absorption tail than is expected from model computations of the piezoelectric photothermal amplitude spectra of ZnSe samples. This experimental effect was presented in other papers [11, 14,15,16]
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