Abstract
This paper describes a novel hybrid silicon photo voltaic structure with a tremendous three times enhancement in open circuit voltage and short circuit current. This is a considerable result in a photo voltaic device with 0.196 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> effective surface area and porous layer on the top surface of the p-type poly-silicon substrate. This substrate is covered with gold layers on both sides following by a titanium dioxide layer and an indium tin oxide layer on the top surface, respectively. An aluminum layer at the back surface completes this novel architecture. The technique of the creation of pores on the p-type substrate resulted in a significant enhancement in open circuit voltage from 17mV to 44 mV and short circuit current from 2.64 μA to 7.66 μA. The fill factor (FF) was also improved from 23% to 24%.
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