Influence of the substrate on the phase composition and electrical properties of 0.65PMN–0.35PT thick films

Abstract

Thick films with the nominal composition 0.65Pb(Mg 1/3Nb 2/3)O 3–0.35PbTiO 3 (0.65PMN–0.35PT) were produced by screen-printing and firing paste prepared from an organic vehicle and pre-reacted powder. The films were fired for 2 h at 950 °C on alumina (Al 2O 3), platinum (Pt), aluminium nitride (AlN) and 0.65PMN–0.35PT substrates. The films were then characterized using scanning electron microscopy, X-ray diffraction and dielectric constant measurements. The X-ray analysis did not detect the presence of any undesirable pyrochlore phase, and the differences in the phase compositions were determined with a Rietveld refinement. The variations of the cell parameters vs. the temperature for the monoclinic and tetragonal phases were calculated. It was demonstrated that under similar processing conditions the microstructures, phase compositions and dielectric properties strongly depended on the stress in the thick films due to the different temperature expansion coefficients of the thick films and the substrates. The 0.65PMN–0.35PT thick films under compressive stresses (for the case of the Al 2O 3 and Pt substrates) exhibited a tetragonal phase in addition to the monoclinic one. The films were sintered to a high density and with a coarse microstructure. These microstructures favour a high dielectric constant. In contrast, for the films under a tensile stress, like the films on AlN substrates, the films were sintered to a lower density and the microstructure consisted of smaller grains. The X-ray analysis showed mainly a monoclinic phase, while the tetragonal phase was not detected. These results indicate the importance of the stresses in 0.65PMN–0.35PT thick films and their influence on the structural and electrical characteristics of the films.