Abstract
Thin films of lead titanate were prepared in-situ using radio-frequency magnetron sputter-deposition. The in-situ perovskite phase formation has been studied as a function of the substrate material, the substrate temperature (TS) and the sputtered lead flux. The incident lead flux is controlled by the lead content in the target (X). Perovskite phase can be obtained under a relatively wide range of sputtering conditions with control of the Pb content in the film. The formation temperature of the perovskite phase increased when the incident Pb flux increased. With an appropriate combination of TS and X, it is possible to grow, at relatively low temperature, stoichiometric thin films compatible with semi-conductor substrates. For example, PbTiO3 films have been deposited on silicon and gallium arsenide substrates at 440°C; these films present ferroelectric properties.
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