Abstract
The influences of two different ways of crystal growth preparations by using different starting materials on the detector properties have been investigated. The characterization has been carried out in terms of structural, optical, and electrical properties of the materials grown with the vertical gradient freeze method. The distributions of Zn and In at different axial positions with different crystals have been compared by using the Induced Coupled Plasma-Mass Spectroscopy technique. The size and density of Te inclusions within the materials have been identified by Infrared Microscopy. The luminescence behaviors have been investigated by studying the defects levels. Particularly, the current–voltage characteristics and Gamma-ray Spectroscopy have been investigated by comparing the performance of detectors achieved from different axial directions of the ingots.
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