Abstract
Abstract Boron nitride thin films have been prepared in a radio frequency magnetron sputtering system using different argon–nitrogen gas mixtures and substrate bias values, being deposited on silicon, aluminium and stainless steel substrates. Optical emission spectroscopy was used to monitor the plasma. Under optimal bias, pressure and temperature conditions stoichiometric films can be obtained, their cubic phase content can be controlled by varying the relative amount of nitrogen in the plasma as well as the total flow. The effect of these parameters on intensity ratio between the emission lines for N+2 ions and boron atoms is related to the amount of the cubic phase found in the films, as determined by infrared spectroscopy. This gives support to the idea that also in sputtered films the ion to atom arrival ratio controls the amount of cubic phase. Films with up to 60 to 70% of cubic phase content can be deposited on metallic substrates using the same optimum conditions.
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