Abstract
The degradation behaviour of standard a-Si:H p-i-n and n-i-p solar cells after light soaking, current injection and keV-electron irradiation is investigated. Utilizing the energy dependence of the penetration depth of the keV-electrons, different spatial distributions of metastable defects were created in the solar cells. A strong influence of the induced defect profiles on the reductions of the solar cell performance parameters j/sub sc/, V/sub oc/, FF and /spl eta/ is found. Applying the different degradation techniques only weak differences in the corresponding internal collection efficiency measurements q(/spl lambda/, U) were observed for the n-i-p solar cells, while a characteristic shift of the crossing point of the q(/spl lambda/, U) curves depending on the defect distribution was noticed for the p-i-n cells. The results of the experiments indicate the degradation of the bulk to be the dominant effect after light soaking in the p-i-n and n-i-p cells investigated in this study.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
