Abstract
Thoroughly understanding and well controlling the structure and grain growth of Cu2ZnSn(S,Se)4 (CZTSSe) absorber layer in CZTSSe solar cells are essential for getting high power conversion efficiency. Herein, the Cu2ZnSnS4 (CZTS) precursor films were prepared in ambient-air condition by solution method and the effects of selenization condition on the microstructure and device performance are systematically investigated. It is found the heating-up time determines the formation manner of both top large-grained and middle fine-grained layer, while the substrate affects the growth of bottom large-grained layer. A proper heating-up time could effectively optimize the fine-grained layer and achieve better crystallined CZTSSe absorber layer together with a higher device efficiency of 3.38%. A growth mechanism is suggested for the structure formation of CZTSSe.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
