Abstract
Passivation of p-Si by hydrogen through its diffusion was simulated by solving diffusion-kinetic equations with allowance made for hydrogen-acceptor-pair formation, internal electric field, and the screening effect. Screening of hydrogen and acceptor ions by free carriers leads to a decrease in the radius of interaction between the ions and to the weakening of the concentration dependence of hydrogen diffusivity in heavily doped Si. At a binding energy of the pairs of 0.70–0.79 eV, calculated and experimental concentration profiles of holes and the hydrogen-acceptor pairs are in agreement over a wide range of boron concentrations, from 4×1014 to 1.2×1020 cm−3. The radius of the Coulomb interaction of hydrogen and boron ions is 35 A in lightly doped Si and decreases as the dopant concentration increases.
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