Abstract
An investigation was made of the influence of the rate of voltage rise on forming and breakdown in a thin-film metal-insulator-metal(MIM) system. It was found that an increase in the rate of voltage rise led to a reduction in the forming probability and consequently to an increase in the breakdown probability when the voltage exceeded a certain critical value, under otherwise identical conditions. Taking into account the known published data on forming and breakdown, the experimental results obtained were used as the basis for a qualitative model of electrical breakdown in the investigated MIM systems.
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