Influence of the pulse number and fluence of a nanosecond laser on the ablation rate of metals, semiconductors and dielectrics

Abstract

We investigated the pulsed laser ablation of metallic (Al), semiconductor (Si), and wide bandgap dielectric (LiNbO 3 ) targets in air at normal atmospheric conditions by using 4.5 ns pulses at 532 nm wavelength. We determined the dependence of the ablation rate on the pulse number and laser fluence. The number of consecutive laser pulses hitting the target on the same area was between 5 and 40, and the laser fluence was varied in the range of 10-250 J/cm 2 by changing the irradiated area at the target surface. We find that the ablation rate of the three targets is approximately constant when the pulse number is smaller than 15. Further increase of the pulse number leads to a decrease of the ablation rate, the fastest decrease of the ablation rate with pulse number being observed for the dielectric target. The dependence of the ablation rate on the laser fluence indicates two different regimes. In the first regime, which is for values of the fluence smaller than the threshold value (~70 J/cm 2 for Al, ~90 J/cm 2 for Si, and ~180 J/cm 2 for LiNbO 3 ), the ablation rate increases approximately logarithmically with the fluence. In the second regime, characterized by values of the fluence greater than the threshold value, there is a steep increase of the ablation rate. This sudden jump of the ablation rate at the threshold fluence is due to the transition from normal vaporisation to phase explosion, and to the changes in the dimensionality of the plasma-plume hydrodynamics from one-dimensional to three-dimensional.