Influence of the preparing conditions on the physicochemical characteristics of glasses for thick film hybrid microelectronics

Abstract

Seven batches of a high-lead glass were used for the preparation of RuO2-based thick film resistors. Investigation of their electrical properties showed a lack of reproducibility of results whose origin was related to changes of the physicochemical properties of the glassy matrix. A systematic investigation of the glass batches, both in form of frit powders and screen printed and fired layers, was carried out with several spectroscopies to detect changes in composition and structure. The spectroscopic methods included x-ray Energy Dispersive Fluorescence (EDS), Scanning Electron Microscopy (SEM), Atomic Absorption (AA), diffuse optical reflection of the powders and specular reflection of the layers, optical transmission, and other complementary methods. The dissolution of Al, due to interaction between the glasses and the alumina substrate, as well as the diffusivity and solubility of Ag due to interaction with the Ag-bearing terminations were measured. The results demonstrated that, apart from small compositional differences, the various batches were characterized by differences in residual stresses, redox reactions, and “microstructure.” The latter was responsible for very notable differences in the optical properties of the glasses, which in turn are closely related with the difference in atomic solubility and diffusivity. Optical spectroscopies have been found to be a suitable means for testing reproducible preparation methods of glass frits for thick-film hybrid microelectronics.