Abstract
AbstractWe investigate the electromechanical fields and transition energies of strained wurtzite InGaN quantum dot nanostructures. Electromechanical fields induced by lattice mismatches in heterostructures, both in and around quantum dots, are analyzed by using fully‐coupled electromechanical equations. The 4×4 Hamiltonian for the wurtzite structure is modified by incorporating the effects of electromechanical fields into the confinement potential and is then analyzed numerically using th the finite element method. The calculated piezoelectric potential is larger if the piezoelectric constant e15 is included in the numerical model. Comparing the cases of e15 = 0 and e15 ≠ 0, we find large discrepancies both in the piezoelectric potential and in the transition energy. This result also suggests that the shear strain effect cannot be neglected for strained wurtzite InGaN quantum dots. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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