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Abstract
We demonstrate peak fT and fmax of 50 GHz for heterojunction bipolar transistors (HBTs) with an oxygen concentration in the epitaxial SiGe base layer of about 1020 cm−3. These fT/fmax values are over 10 GHz higher than for identically processed HBTs with an O content of only 1018 cm−3. This is due to reduced transient enhanced diffusion of boron in the O-rich layers. However, the base carrier lifetimes are reduced by the high oxygen content. We show that ideal base current characteristics and a low 1/fnoise level can be obtained despite this effect by localizing the emitter-base space-charge region outside the O-rich layer.
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