Influence of the nucleation layer annealing atmosphere on the resistivity of GaN grown by metalorganic chemical vapor deposition

Abstract

High-resistance (HR) GaN with sheet resistance of 1.0×108Ω/sq was grown on sapphire substrates using metal organic chemical vapor deposition. Sheet resistance of the GaN film increases 4 orders of magnitude by changing the nucleation layer (NL) annealing atmosphere from H2 to N2. It is observed that the morphology of the NLs strongly depends on the annealing atmosphere. The analysis results based on high-resolution X-ray diffraction (HR-XRD) and etch pit density (EPD) measurements demonstrate that the density of edge-type threading dislocations increases with the proportion of the N2 in the annealing atmosphere. Photoluminescence (PL) spectra is employed to analyze the optical properties of GaN films. The XRD and PL results indicate the primary compensating mechanism is due to acceptor levels introduced by the increase in edge-type threading dislocations density. It is concluded that the annealing atmosphere of the NL controls sizes and densities of the nucleation islands, which affect electrical properties of GaN epitaxial films through changing the ratio of edge to screw/mixed-type threading dislocations.