Abstract
A new expression of the transverse acoustoelectric voltage (TAV) is obtained for semiconductors including both majority and minority carriers. Numerical results are given and compared for LiNbO3/Si and LiNbO3/GaAs structures. It is shown that the influence of the minority carriers is restricted to quasi-intrinsic semiconductors. The change in sign of the TAV for low conductivities and low frequencies, previously predicted for extrinsic semiconductors, is confirmed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
