Abstract

Simultaneous measurements of spectroscopic terahertz emissions from and SiC photoluminescent local temperature T(r) distributions of high transition temperature Tc superconducting Bi2Sr2CaCu2O8+δ rectangular mesa devices were made. A local region with T(r) > Tc known as a hot spot can emerge with current bias changes. When the hot spot position was moved to a mesa end by locally heating the mesa surface with a laser beam, the intensity of the emission increased, but no changes to its frequency or line width were observed. These results suggest that higher power radiation is attainable by adjusting the hot spot position.

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