Abstract
The switching behavior of the high voltage (HV) SiC MOSFETs is superior to that of HV silicon IGBTs. In medium voltage high switching frequency power conversion applications, the reverse recovery effect of the body diode results in large switching losses. In this work, the reverse recovery behavior of the body diode of the recently developed 3.3 kV SiC MOSFETs is investigated at varying junction temperature and current levels. Two solutions are proposed to reduce the reverse recovery losses - by using the optimized dead-time and by integrating Schottky diode in the MOSFETs. The experimental results validate the proposed solutions. A device physics-based numerical model is used to explain the improvement in the body diode reverse recovery characteristics at the smaller dead-time.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
