Abstract
We present a Thomas–Fermi-based envelope function calculation of the electronic structure for n-type double δ-doped GaAs quantum wells under the influence of applied hydrostatic pressure. An empirical formula for the electron mobility is used to qualitatively describe some transport properties in the system. The optimal interwell distance and hydrostatic pressure for which the mobility would be a maximum are obtained, particularly in the high density limit (above 1013cm-2). This could be of interest for the design and fabrication of high power, high speed electronics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Microelectronics Journal
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
