Year-end Sale % OFF 
Abstract
The formation of ridge structures on 〈100〉 aligned mesa stripes defined on GaAs (001) substrates has been investigated as a function of the substrate temperature, V/III flux ratio, and GaAs deposition quantity. Across the entire range of deposition conditions employed, the ridge structures were observed to form with {110} facets, indicating a similar growth mechanism in all cases. The {110} facet lengths on the ridge structures were accurately reproduced using a simple one-dimensional geometric model that included the effects of Ga adatom migration from the {110} facets to the upper ridge surface and resulting in an additional Ga flux. The results have important implications for the controlled growth of micron-scale ridge structures on patterned substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
