Abstract
The formation of ridge structures on 〈100〉 aligned mesa stripes defined on GaAs (001) substrates has been investigated as a function of the substrate temperature, V/III flux ratio, and GaAs deposition quantity. Across the entire range of deposition conditions employed, the ridge structures were observed to form with {110} facets, indicating a similar growth mechanism in all cases. The {110} facet lengths on the ridge structures were accurately reproduced using a simple one-dimensional geometric model that included the effects of Ga adatom migration from the {110} facets to the upper ridge surface and resulting in an additional Ga flux. The results have important implications for the controlled growth of micron-scale ridge structures on patterned substrates.
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