Abstract
Diffusion of impurities of transition metals Fe, Cu, and Cr in heavily doped p +-, n +-, and intrinsic (at diffusion temperature) GaAs is studied. A technique in which impurity diffuses into GaAs-based structures with heavily doped layers (p +-n or n +-n) was used. It is shown that the impurity diffusivity values in p +-GaAs and n +-GaAs are significantly higher and lower, respectively, than for i-GaAs. The results obtained are discussed taking into account the effect of the electron-hole equilibrium shift in semiconductors on the diffusion of impurities migrating according to the dissociative mechanism. The interstitial-component concentration for Fe, Cu, and Cr impurities in GaAs was determined at the diffusion temperature.
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