Abstract

An electrostatic discharge sensitivity study of four different types of InGaAsAnP avalanche photodiodes revealed that destruction occurred generally during negative pulse application at pulse amplitudes between 700V and 1400V. Photoluminescence and differential phase contrast imaging has been used for failure localization. A correlation between the location of the device breakdown and the active area inhomogeneity has been found for one type of avalanche photodiode.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call