Abstract
The effectiveness of introduction of radiation defects (RDs) into the base of solar cells (SCs) during irradiation by γ-quanta 60Co depending on resistivity and type of monocrystalline silicon and the effect of induced RDs on photoelectric characteristics of SCs is studied. It is shown that divacancies with levels Ec −0.39 eV and Ev +0.31 eV, due to the complex V-O-C, are the dominant radiation defects responsible for degradation of characteristics and parameters of silicon SCs during operation in radiation fields.
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