Influence of the conditions for the formation of In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--SnO-=SUB=-2-=/SUB=- films by magnetron sputtering on the charge carriers lifetime in silicon

Baranov A I Baranov A I,Gudovskikh A S Gudovskikh A S,Kudryashov D A Kudryashov D A,Maksimova A A Maksimova A A,Monastyrenko A O Monastyrenko A O,Morozov I A Morozov I A,Uvarov A V Uvarov A V

doi:10.21883/tpl.2022.15.54271.18945

Influence of the conditions for the formation of In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--SnO-=SUB=-2-=/SUB=- films by magnetron sputtering on the charge carriers lifetime in silicon

Baranov A I Baranov A I, Gudovskikh A S Gudovskikh A S + Show 5 more

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https://doi.org/10.21883/tpl.2022.15.54271.18945

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Journal: Technical Physics Letters

Publication Date: Jan 1, 2022

Affiliation: Saint Petersburg Academic University, Saint Petersburg State Electrotechnical University

#Lifetime In Silicon #Charge Carriers Lifetime + Show 8 more

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Abstract

The critical influence of the indium-tin oxide films formation rate on the degradation degree of the a-Si : H/c-Si interface during magnetron sputtering is shown. It was found that when the distance between the magnetron and the sample is 10 cm, the lifetime decreases from ~ 2 ms to 10 μs, while when this distance is reduced to 7 cm, due to a two-times decrease in the deposition time, a decrease is observed from 1.5 ms to 450 μs. Keywords: silicon, plasma-enhance deposition, thin films, passivation, ITO, solar cells.

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