Abstract

The identification of electronic processes at the charge-selective contact buried interface is very important for photovoltaic research. The main loss of perovskite solar cell (PeSCs) is generally bound up with its charge transfer layer. Especially, the current record for the highest power conversion efficiency of quasi-two-dimensional (quasi-2D) PeSCs is achieved by inverted device configurations, compared with the efficiency of upright structures. This study investigated, the carrier recombination and charge extraction in quasi-2D PeSCs by leveraging scanning probe microscope technology, steady-state photoluminescence (PL) measurements, and time-resolved PL spectroscopy. The built-in potential in quasi-2D bulk perovskite can be regarded as a budget to hinder energy loss in inverted device configurations. Interface photogenerated recombination in quasi-2D PeSCs can be fully comprehended only when the complete device is under consideration. Our work underlines the significance of considering restructuring loss from the perspective of the complete device instead of individual layers or interfaces in quasi-2D PeSCs.

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