Abstract
The effects of scattering time of carriers are introduced in the analysis of donor-acceptor and band-acceptor photoluminescence bandshape in GaAs. The proposed model is in very good agreement with experimental spectra, markedly in the low energy edges of the emission bands. We apply this model to optically determine the compensation ratio and the relative concentration of residual acceptor impurities in n-type GaAs samples grown by MOVPE.
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