Abstract
The formation process of InAs quantum dashes and quantum dots (QDs) grown on quaternary InAlGaAs surfaces lattice-matched to n-type InP(100) are investigated. A clear trend of the InAs to form dashes or dots depending on the species of supplied arsenic could be demonstrated. Using As4, elongated quantum dashes can be observed. Changing the growth mode to As2 molecules enables a shape transition from dashes to dome-shaped QDs. The dot ensembles exhibit improved photoluminescence (PL) intensity and linewidth over their elongated counterparts. With this basic concept, low temperature PL linewidths as low as 23 meV have been achieved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
