Influence of the annealing temperature on the organometallic halide perovskite phase formation via CH3NH3Cl as additive in sequential deposition process

Abstract

Abstract Organometallic halide perovskite materials with the general formula ABX3 have been recently interested as active layers in perovskite solar cells. It is well known that the O2 is the main problem for fabricated perovskite solar cells. Usually, the perovskite thin film need to be prepared in the N2 atmosphere or in the glove box. In this research, the metal halide perovskite CH3NH3PbI2Cl thin films were successfully deposited using spin-coating technique via a single step solution deposition and CH3NH3Cl as additive in sequential deposition process in the open air. The effect of annealing temperature on the organolead halide perovskite phase formation of CH3NH3PbI2Cl thin film was investigated. The phase formation as well as crystal structure were investigated by X-ray diffractometer, and we found that organolead halide perovskite thin film exhibited a pure phase perovskite without the unwanted phases. The crystallinity of the perovskite thin film was enhanced significantly by increasing the annealing temperature, and a single phase of the perovskite phase was observed by increment of the annealing temperature that is above 100OC. In addition to this, the growth of crystallinity in the halide perovskite thin film was increased with increasing heat treatment temperature. Furthermore, the morphology variation of the thin films were examined by Field Emission Scanning Electron Microscopy.