Abstract
The effects of the AlN molar fraction on structural and optical properties of praseodymium implanted AlxGa1−xN (0⩽x⩽1) layers were investigated. Using photoluminescence and excitation luminescence techniques we are able to observe the intra-4f23P1→3H5 (526nm) and 3P0→3F2 (652nm) transitions of the Pr3+ ion. The red emission peak position shifts to lower energies with increasing Al content in the alloys. The peak full-width at half-maximum increases with the Al content up to x=0.7 due to disorder effects. The implantation damage and Pr-incorporation was investigated by Rutherford backscattering spectrometry doing channelling measurements along the 〈0001〉 direction. X-ray diffraction reciprocal space maps show an expansion of the c lattice parameter in the implanted region which is reversed after thermal annealing at 1300°C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
