Abstract
CuIn1-xGaxSe2 (CIGS) based solar cells with In2S3 buffer layers deposited by ultrasonic spray pyrolysis (USP) yielded efficiencies of 13%. The photovoltaic properties of solar cells with USP-In2S3 buffer layers depends on the absorber properties, especially on the ratio [Ga]/[In+Ga]. Here we present the influence of CIGS bulk and surface modifications on the device performance and on the dominant recombination path. CuIn1-xGaxSe2 absorbers were grown in a 3-stage process with x varying from 0 to 0.32. Quantum efficiency measurements were used to determine the absorber’s band gap. The bulk composition of the absorber was measured by energy dispersive x-ray spectroscopy and correlated to the J-V characteristics. Temperature dependent J-V measurements were used to analyze the dominant recombination path in CIGS cells with USP-In2S3 buffer layers. The optimum [Ga]/[In+Ga] ratio in the absorber for USP-In2S3 buffer layers was found to be around 0.24 which is lower than for standard CdS buffers.
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