Influence of tensile vs. compressive stress on fatigue of lead zirconate titanate thin films

Abstract

Novel applications of ferroelectric films require a variety of different substrates, which exert different mechanical stress on the film. This raises the question of reliability of differently stressed films. This work compares the cycling-induced fatigue of the polarization hysteresis of PZT films in different stress states. A tensile stress of +270 MPa, for PZT on fused silica glass, causes gradual degradation, while degradation sets in abruptly under compressive stress of −100 MPa, for PZT on sapphire. The main fatigue mechanism is domain wall pinning on charged defects. Reversible and irreversible domain wall processes in the small- and large-signal permittivity reveal that the fatigue behavior results from a variation of the ferroelectric domain structure. Films under tensile stress contain more 90° domain walls, which get pinned continuously on isolated defects. Compressive stress creates more 180° domain walls, which require formation of defect agglomerates during a certain threshold cycle number for pinning.