Abstract
This study presents a theoretical study of a vertical parallel junction solar cell under multispectral illumination in steady state. Based on the diffusion equation, the excess minority carrier's density is expressed and both photocurrent density and photovoltage are determined. For all these parameters we showed the effect of external temperature with respect to the operating point of the solar cell through the junction recombination velocity.
Highlights
From 100% of incident energy, a very small proportion is reflected by the surface of the solar cell and about 13% is extracted in the form of electrical energy; as a result it is more than 85% of the incident energy that must be dissipated as heat (Agroui, 1999)
One can note that photocurrent density increases rapidly with increasing junction recombination velocity until short circuit; given that junction recombination velocity traduces carrier flow through the junction, an increase of the former will induces an increase of the photocurrent density
High junction recombination velocity values are linked to short circuit operating point and very low Sf values arise near open circuit
Summary
From 100% of incident energy, a very small proportion is reflected by the surface of the solar cell and about 13% is extracted in the form of electrical energy; as a result it is more than 85% of the incident energy that must be dissipated as heat (Agroui, 1999). The aim of this study is to investigate the influence of temperature on electrical parameters such as: current density and photovoltage across the junction. From the diffusion-recombination equation the excess minority carrier’s density will be determined.
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