Abstract
In this work, we study the influence of temperature on the p-GaN gate (with/without spacer) enhancement mode HEMT. First, the HEMT structure is designed with a p-type gate and its DC characteristics have been studied at room temperature (R T ). It is observed that on-current increases significantly (1.2 times high) when the spacer layer is removed. The influence of temperature variation has been analysed in both the devices in terms of on-current (I d ), leakage current (I off ), threshold voltage (V t ) and on-resistance (R on ). Our simulation results show that the without spacer layer p-GaN gate HEMT enhances the device performance for various temperatures.
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