Abstract
The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1−x Ga x As materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm−3 and 1018 cm−3, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1−x Ga x As materials at x 0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In1−x Ga x As is longer than that of n-type In1−x Ga x As with the same temperature, Ga composition and carriers concentration.
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