Abstract
The influence of spatial inhomogeneous temperature distribution caused by dissipated power on BAW resonator's behavior has been investigated for the first time. A novel modeling approach with an acceptable calculation time taking the temperature distribution into account has been developed allowing an improved modeling of BAW resonator behavior at high power levels. By applying the modeling approach it could be shown that the common way to use a measured TCF to determine the device temperature at high power levels is not generally valid and can lead to inaccuracies in life time predictions. The modeling approach has been verified by infrared temperature measurements of BAW resonators under high power loads.
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