Influence of technological regimes of plasma chemical deposition on texture formation in aluminum nitride films

Abstract

Textured polycrystalline aluminum nitride films were grown by magnetron sputtering of an aluminum target in a mixture of argon and nitrogen, followed by the formation of a film on sitall substrates. The influence of the pressure of the working gases, the power dissipated on the target, and the ratio of the Ar / N2 gas fluxes on the texture of the aluminum nitride films are investigated. The phase composition and degree of crystallinity of the obtained films were determined using scanning electron microscopy and X-ray diffraction. The results of studies of the phase composition and parameters of the crystal structure of aluminum nitride films are presented: the size of the coherent scattering regions, the predominant orientation of the crystallites in the growing film, and the degree of crystallinity. It is noted that the films are predominantly oriented along the (111) and (002) planes. The degree of crystallinity of the A1N films varied from 10 to 30% depending on the conditions of the deposition process. The relative microdeformation of the lattice (Δd/d), depending on the parameters, ranged from 1.7·10−3 to 6.9·10−3. The size of the crystallites is affected by the microdeformation of the lattice, with its increase by 4 times, the size of the crystallites decreased by 3.6 times from 29 to 8 nm.