Influence of technological parameters during multiwire cutting of GaAs ingots on the surface characteristics of the plates

Abstract

Mechanical processing of semiconductor monocrystalline ingots is one of the key stages in the production of GaAs wafers. The main issue for obtaining high-quality plates is to determine the optimal parameters of machining and is to identify the dependencies of the surface quality of the substrates after cutting on the parameters set in this technological process. Technology for the production of polished semiconductor wafers (substrates) almost all semiconductor materials have a similar and has in its difference only a number of distinctive features related to the mechanical and structural features of individual materials. Mechanical processing is the first stage after crystal growth, in which it is necessary to observe and improve many technological parameters to obtain high-quality finished products. In the technological process of semiconductor processing, it is necessary first of all to divide the crystal into plates with similar surface characteristics. The quality of this separation determines which plates will eventually turn out and how suitable they will be as substrates for the production of devices in mass production. The study of the influence of cutting parameters on the structure of the disturbed layer and the basic geometric parameters of the plates allows us to identify the optimal parameters of mechanical cutting and to identify the range of deviations possible to obtain plates of similar quality for further processing.